All-carbon that is suitable for various substrates. Radiation

All-carbon electronic devices have attracted great interest for the
next generation of wearable computers parts
and flexible optoelectronics, owing to their novel electrical
properties, flexible structure and cost effectiveness 1–4. In particular, carbon
nanotubes, graphene, graphene oxide (GO), or their composites have become a
sparkling rising star on the horizon of material science in the last several
years 5,6.  The superior properties of graphene
including large specific surface area, excellent mobility of charge carriers
and good electrical conductivity 7,8 support graphene as a test-bed for
fundamental science.

As a promising application for graphene oxide, resistive random
access memory (RRAM) has attracted a great deal of interest as a next
generation nonvolatile memory (NVM) device for high-performance computer. Up to
now, GO/TiO2 nano-particle RRAM devices have shown low switching
voltage (about ±1V) 9 and good endurance up to 105 cycles and long
retention time more than 5 × 103 s 10. Also, excellent large flexibility
area without degradation of memory performance for ?100 cycles has
also been reported for GO based device 11. The optimization of the
graphene-based materials for memory application passes through universal
parameters such as preparation technique which including the type of reduction
method, additives/size and device structure configuration.

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Starting with the reduction of exfoliated GO, chemical 12 and
thermal reduction 13 methods worked well for obtaining conductive graphene
sheets or films. However, these methods have some intrinsic weaknesses:
chemical reduction often uses toxic chemicals such as hydrazine; thermal
reduction is not suitable for plastic substrates. Recent researches focus on
developing a facile and green reduction method that is suitable for various
substrates. Radiation reduction of GO is deemed as the simpler, purer and less
harmful method that may overcome the shortcomings of other conventional
reduction methods 14. In practical applications, graphene nanosheets usually
suffer from agglomeration or restacking giving rise to a great technical
difficulty in the fabrication of graphene-based devices. These agglomerations
are due to the strong van der Waals interactions between graphene sheets, thus,
there has been a pronounced interest in developing reliable and low-cost
synthetic methods for preparation of the soluble-processable graphene
derivatives 15.

On the other hand, the vast majority of the graphene based RRAM
devices reported in literature are made of Metal-Insulator-Metal (MIM) type
structures. A simple and effective alternative structure is the planar
configuration where a significant lower intrinsic capacitance is performed
compared to the MIN structure 16, 17. In our present investigation, we report
a facile preparation strategy of graphene/TiO2 thin film for
possible RRAM memory applications using planar configuration. UV irradiation is used as a green and
simple tool for the reduction of GO/TiO2 dispersion. Loading TiO2 nanoparticles on the graphene
nanosheets surface are anticipated to prevent the restacking of graphene
nanosheets, thus resulting in enhanced electrical performance.

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